【摘要】 采用γ-巯丙基三甲氧基硅烷(KH590)对纳米二氧化硅表面进行接枝改性,研究KH590用量、反应时间和反应温度等对纳米二氧化硅相对接枝率和粒径的影响;采用红外光谱(FT-IR)和扫描电子显微镜(SEM)等手段对改性前后的纳米二氧化硅进行表征。结果表明:KH590通过水解后与二氧化硅粒子表面的羟基发生反应,成功接枝到纳米二氧化硅表面;其最佳工艺条件为:KH590用量为二氧化硅质量的15%,反应温度为80℃,反应时间为10 h,其相对接枝率达到10.3%;与未改性纳米二氧化硅相比,其平均粒径明显变小,分散性及亲油性明显变好。更多还原

【Abstract】 The nano-sized SiO2was grafted and modified with 3-mercaptopropyl trimethoxysilane(KH590).The influences of KH590 content,reaction time,and temperature on grafting rate and particle size of nano-sized SiO2were studied.The modified and unmodified SiO2were characterized by Fourier transform infrared spectroscopy(FT-IR) and scanning electron microscope(SEM).Results showed that KH590 was successfully grafted on the surface of nano-sized SiO2through the reaction with the hydroxyl groups on the surface of SiO2after hydrolysis;the optimal modification conditions were as follows:KH590 content was 15%(mass fraction) based on SiO2,reaction temperature was 80 ℃,and reaction time was 10 h;The relative grafting rate could reach 10.3%;and compared with the unmodified SiO2particles,the modified SiO2particles showed smaller size,better dispersion and lipophilicity.更多还原