节点文献
闪存高压电路的总剂量辐射效应研究
Investigation of Total Ionizing Dose(TID) Effect on High- Voltage Circuits in Flash Memory
【摘要】 研究了闪存电路系统中高压电路的总剂量辐射效应(TID)。通过对内部高压电荷泵电路和高压负载电路的TID辐射效应测试研究,表明辐照后高压通路相关的存储阵列及高压晶体管漏电将造成电荷泵电路的负载电流过载失效,最终导致闪存电路编程或擦除操作失效。
【Abstract】 The TID radiation degradation of high- voltage circuits in the flash memory circuit system is studied. We evaluates the effect of TID radiation to the internal high- voltage charge pumpings and their periphery circuits. The results show that the functional failures of charge pumping circuits are induced by the increasing leakage of memory array and high- voltage transistors after radiation,and leads to operation failure from the programming.
【关键词】 闪存;
高压电路;
电荷泵;
总剂量辐射;
【Key words】 Flash memory; High-voltage circuits; Charge pumping; Total Ionizing Dose(TID);
【Key words】 Flash memory; High-voltage circuits; Charge pumping; Total Ionizing Dose(TID);
- 【文献出处】 微处理机 ,Microprocessors , 编辑部邮箱 ,2014年06期
- 【分类号】TP333
- 【下载频次】56