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闪存高压电路的总剂量辐射效应研究

Investigation of Total Ionizing Dose(TID) Effect on High- Voltage Circuits in Flash Memory

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【作者】 杨大为刘利芳谯凤英陆虹潘立阳

【Author】 YANG Da-wei;LIU Li-fang;QIAO Feng-ying;LU Hong;PAN Li-yang;The 47th Research Institute of China Electronics Technology Group Corporation;Institute of Microelectronics,Tsinghua University;

【机构】 中国电子科技集团公司第四十七研究所清华大学微电子学研究所

【摘要】 研究了闪存电路系统中高压电路的总剂量辐射效应(TID)。通过对内部高压电荷泵电路和高压负载电路的TID辐射效应测试研究,表明辐照后高压通路相关的存储阵列及高压晶体管漏电将造成电荷泵电路的负载电流过载失效,最终导致闪存电路编程或擦除操作失效。

【Abstract】 The TID radiation degradation of high- voltage circuits in the flash memory circuit system is studied. We evaluates the effect of TID radiation to the internal high- voltage charge pumpings and their periphery circuits. The results show that the functional failures of charge pumping circuits are induced by the increasing leakage of memory array and high- voltage transistors after radiation,and leads to operation failure from the programming.

  • 【分类号】TP333
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