【摘要】 通过对X射线转换屏制备过程中,Tl+掺杂浓度、基底刻蚀、晶柱生长过程和防潮解等方面的大量实验研究,得到最佳掺杂浓度(摩尔比为0.055%)及合适的基底刻蚀深度(5μm)与工艺,实现对晶柱生长过程中表面形貌、温度、压力和转速的控制,研制出有效直径为100 mm、空间分辨率约为12lp/mm(厚度为300μm)的CsI(Tl)X射线转换屏.更多还原

【Abstract】 Aimed to obtain a CsI( Tl) X-ray converting screen with high spatial resolution,a lot of experiments have been carried out including Tl+doping concentrations,etching substrates,and growing crystal columns. It is found that the mole ratio of 0. 055% and 5 μm is the best doping concentration and etching depth respectively. Also well controlled are the influence factors for the crystal column growing,such as surface features,temperatures,pressures, and speeds of rotation. The experimental evaluation has shown that a CsI( Tl) X-ray converting screen with spatial resolution of 12 lp / mm( the thickness of 300 μm) and active diameter of 100 mm is developed successfully.更多还原