【摘要】 采用了电子束蒸发在Si(100)片沉积了碳化硼(B4C)薄膜,并用傅里叶变换衰减全反射红外光谱(ATR-FTIR)和X射线光电子能谱(XPS)对薄膜样品组分和结构进行分析,以研究在不同基片温度和束流下对薄膜结构的影响.分析表明:薄膜中均含有1170cm-1,1660cm-1两个特征峰,分别对应于碳化硼中正二十面体和三原子链的结构.不同基片温度对薄膜化学结构无影响;而不同束流,形成的结构不同,主要体现在碳化硼的特征结构(三原子链和正二十面体)的形成,随着束流的增大,薄膜中二十面体结构显著增多,B的流失减少.更多还原

【Abstract】 Boron carbide films were deposited on Si(100)by means of electron beam evaporation of a boron carbide target in vacuum and their structures at different substrate temperatures and currents were studied by using Attenuated Total internal Reflectance Fourier Transform Infrared spectroscopy(ATRFTIR)and X-Ray Photoelectron Spectrometer(XPS).The results show that all films contain two characteristic peaks at 1170cm-1 and 1660cm-1,which correspond to the 12-atom icosahedra and 3-atom linear chain of boron carbide,respectively.The substrate temperature has no effect on films’ structures;however,the current can influence the structures.That is to say,the 12-atom icosahedra of boron carbide increase significantly and the wastage of B decreases with the increase of current.更多还原