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Li-O共掺杂AlN晶体的第一性原理研究

First-principles Study of Li-O Co-doped AlN Crystal

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【作者】 闫征郑瑞生武红磊

【Author】 YAN Zheng;ZHENG Rui-sheng;WU Hong-lei;Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education,Key Laboratory of Optoelectronic Devices and Systems of Guangdong Province,College of Optoelectronic Engineering,Shenzhen University;

【机构】 深圳大学光电工程学院,光电子器件与系统(教育部/广东省)重点实验室

【摘要】 采用基于密度泛函理论的第一性原理全势线性缀加平面波法,研究了Li-O共掺杂纤锌矿AlN体系的晶格结构、电子态密度、能带结构和光学性质,较详细地分析了O对Li掺杂AlN晶体p型特性的影响。结果表明:Li-O共掺杂会导致AlN晶格收缩和禁带宽度减小;与Li单掺杂相比,O杂质的加入使得价带顶部的态密度峰值减小且局域化加强,降低了Li在AlN晶体中的受主特性。相较于未掺杂时的情况,Li-O共掺杂AlN的介电函数虚部谱只保留了位于7.5 eV处的主峰,谱线也变得更加平缓,而材料的吸收区范围未受到影响。Li-O共掺杂后的AlN材料依然能很好地工作在紫外光区域。

【Abstract】 Based on first-principles full-potential linearized augmented plane-wave method( FP-LAPW)density functional theory( DFT),the crystalline structure,the density of states,the band structure and the optical properties of p-type Li-O codoped wurtzite AlN were investigated theoretically. The calculation results show that both the lattice constants and the band gap of AlN crystal will shrink due to the Li and O impurities codoping; the density of states around maximum of the valence band has been reduced and its localization has got strengthened compared to the Li doping situation. Li-O codoping depressed the ptype properties of Li doped AlN. The calculated dielectric function reveals that all the other peaks vanish except the main peak located at 7. 5 eV after Li-O codoping and the spectrum becomes smooth,but the absorption region remains unchanged. The Li-O codoped AlN crystal still works excellently in the ultraviolet region.

【关键词】 AlN第一性原理态密度光学性质
【Key words】 AlNfirst-principledensity of stateoptical property
【基金】 国家自然科学基金重点项目(61136001);高等学校博士学科点专项科研基金项目(20114408110002);深圳市科技计划项目(20120821110533437);深圳大学青年教师科研启动项目(201451)
  • 【文献出处】 人工晶体学报 ,Journal of Synthetic Crystals , 编辑部邮箱 ,2014年10期
  • 【分类号】O469
  • 【被引频次】2
  • 【下载频次】131
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