【摘要】 利用分子束外延方法(MBE)在GaAs(001)衬底上外延生长了GaSb薄膜,并对GaSb薄膜进行了高温退火研究,利用高分辨透射电子显微镜(HRTEM)、原子力显微镜(AFM)、Hall效应(Hall Effect)和低温光荧光谱(LTPL)等手段对薄膜的晶体质量、电学性质和光学性质进行了研究。发现直接生长的GaSb膜表面平整,空穴迁移率较高。研究发现30 s、650℃的快速热退火可消除位错等缺陷,显著提高GaSb薄膜的光学质量。更多还原

【Abstract】 GaSb thin films were grown on GaAs(001) substrates by Molecular Beam Epitaxy(MBE), and their thermal annealing process of GaSb films was investigated.The crystalline quality,electrical properties and optical properties were studied by high resolution transition electron microscopy(HRTEM),atomic force microscopy(AFM),Hall measurement and low temperature photoluminescence spectra(LTPL),respectively.It was found that the GaSb films directly grown on GaAs substrates have smooth surface and high hole mobility.Rapid thermal annealing of GaSb films by 30 s,650 ℃ can eliminate the defects such as dislocations,significantly improve the optical quality of GaSb thin films.更多还原