【摘要】 在高纯ZnGeP2多晶批量合成基础上,采用垂直布里奇曼法生长出尺寸(40~50)mm×140 mm的高品质单晶。切割出多种6 mm×6 mm×(16~30)mm规格的晶体元件,元件o偏振光2.05μm吸收系数为0.01~0.03cm-1,通过光参量振荡技术实现中波(3~5μm)40 W和远波(8~10μm)3 W的激光输出。更多还原

【Abstract】 Based on masses of high-purity ZnGeP2polycrystalline materials synthesized in one run,and high-optical quality single crystals with dimensions of (40-50) mm × 140 mm were grown by Vertical Bridgman technique. More than one devices were fabricated along phase-matching directions with the typically dimension of 6 mm × 6 mm ×(16-30) mm from the large single crystals. The absorption coefficient of the devices under o-polarized 2. 05 μm light was about 0. 01-0. 03 cm-1. Through the optical parametric oscillation these devices realized high-power mid-infrared waveband(3-5 μm) and farinfrared waveband(8-10 μm) output 40 W and 3 W,respectively.更多还原