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Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

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【Author】 CHEN Gui-chu;FAN Guang-han;Department of Electronic Information, Zhao Qing University;Institute of Optoelectronic Material and Technology, South China Normal University;

【机构】 Department of Electronic Information Zhao Qing University； Institute of Optoelectronic Material and Technology South China Normal University；

【摘要】 The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly.更多还原

【Abstract】 The steady and dynamic properties are comparatively investigated for the n-doped and non-doped InGaN LEDs. The simulated results show that the n-doped LED exhibits the superior luminescence and modulation performance, which is mainly attributed to the higher carrier radiative rate of n-doped LED. The results can explain the reported experimental results perfectly.更多还原

【关键词】 doping； perfectly； radiative； attributed； luminescence； nitride； explain； visible； illumination； capacitance；

【基金】 supported by the National Natural Science Foundation of China(No.61176043)

【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2014年04期

【分类号】TN312.8
【被引频次】2
【下载频次】69

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