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Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

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【Author】 LI Tian-wei;ZHANG Jian-jun;CAO Yu;HUANG Zhen-hua;MA Jun;NI Jian;ZHAO Ying;Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin,Key Laboratory of Photo-electronic,Information Science and Technology,Ministry of Education of China,Institute of Photo-electronic Thin Film Devices and Technique,Nankai University;

【机构】 Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin,Key Laboratory of Photo-electronic,Information Science and Technology,Ministry of Education of China,Institute of Photo-electronic Thin Film Devices and Technique,Nankai University；

【摘要】 Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously.Additionally,the microstructural properties of the μc-SiGe:H films are also studied.By combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.更多还原

【Abstract】 Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously.Additionally,the microstructural properties of the μc-SiGe:H films are also studied.By combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.更多还原

【关键词】 SiGe； bonding； PECVD； optimizing； dramatically； silane； attractive； fitting； attributed； junction；

【基金】 supported by the National Basic Research Program of China(Nos.2011CBA00705,2011CBA00706 and 2011CBA00707);the National Natural Science Foundation of China(No.61377031);the Natural Science Foundation of Tianjin(No.12JCQNJC01000);the Fundamental Research Funds for the Central Universities

【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2014年03期

【分类号】TN304.05
【被引频次】3
【下载频次】18

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