【摘要】 针对智能手机功能集成度与功耗的矛盾,提出了一种适用于射频和基带的微型电源管理IC新架构,并基于MOS器件的亚阈值特性,详细地给出其中具有低功耗零温漂的电流基准及电压基准电路的设计。基于TSMC 0.25μm CMOS混合信号工艺,通过Cadence公司的Spectre软件进行仿真验证。结果表明,在-20℃~110℃范围温度内,基准源在工作电压为3.6 V时,可输出50 nA±0.25 nA的基准电流;当电源电压在0.8~4 V变化时,可提供稳定的0.671 V基准电压,其中在0℃~50℃的常温内,具有1.49×10-5/℃的温度系数;在0~100 kHz频率范围内,基准源的PSRR可达到-74 dB。更多还原

【Abstract】 For the contradiction between smart phones integration and increasing power consumption, a new architecture of micro power management IC for RF and baseband was presented. Based on the sub-threshold characteristics of MOS devices, the low-power zero-drift current reference and voltage reference circuits were designed in detail. When simulated by Cadence Spectre software with TSMC 0.25 μm CMOS mixed-signal technology, the results showed that the output of the current reference was 50 nA ± 0.25 nA while the temperature was in the range of-20 ℃ to 110 ℃ and the operating voltage was 3.6 V. It could provide stable 0.671 V reference voltage when the supply voltage changed from 0.8 V to 4 V, and the temperature coefficient was 1.49 ×10-5 /℃ at the room temperature from 0 ℃ to 50 ℃. The PSRR of reference was up to-74 dB within 100 kHz.更多还原