【摘要】 分析了N沟道VDMOS器件的单粒子辐射损伤机理和损伤模式,讨论了VDMOS器件的单粒子辐射加固措施。使用锎源,对采取了加固措施的一款200V高压N沟道VDMOS器件进行单粒子效应试验研究。对比分析了不同漏源电压和栅源电压以及不同真空度对VDMOS单粒子效应的影响,可为VDMOS器件的单粒子辐射加固、试验验证及应用提供参考。更多还原

【Abstract】 Single-event-effect(SEE)damage mechanism and damage mode of n-channel VDMOS were analyzed,and radiation-hardening techniques for VDMOS device were discussed.A 200Vn-channel VDMOS hardened with the proposed radiation-hardening technique was irradiated with Cf source to study single-event-effect of VDMOS devices.For the same device,SEE of VDMOS at different drain-source and gate-source voltages and different vacuum levels was analyzed.This work may serve as a reference for designing SEE hardened VDMOS device,as well as its experimentation and application.更多还原