【摘要】 IGBT在控制脉冲大电流时,回路杂散电感中存在较高电流变化率所形成的纳秒高尖峰电压,从而产生过压损坏。通过分析3种类型(C型、RC型和RCD型)吸收电路的特点,采用RCD型和C型吸收电路的组合后,可以有效地使尖峰能量向脉冲后沿分散,使高压尖峰转化为低压震荡。最终可将IGBT在关断时的C-E极间电压控制在不超过母线电压的1/3,从而达到保护IGBT的目的。更多还原

【Abstract】 A nanosecond high voltage peak is observed when IGBT is used to control large current pulse. It is produced by a salutatory current reducing rate along with the stray inductances,and the IGBT is led to overvoltage damage. By analyzing three styles of snubber circuits( Type C,Type RC and Type RCD),a combination of type RCD and C is considered. It is efficient to disperse the peak energy,and turns the high voltage peak to low voltage oscillation. And more,the voltage Vce of IGBT does not exceed 1 /3 busbar voltage. The goal of IGBT protection can be achieved.更多还原