【摘要】 InAs/GaSbⅡ类超晶格以其特有的量子效率高、暗电流小、能带结构可调等材料性能和器件优势,成为第三代红外探测器技术的最佳选择之一。本文报道了中波InAs/GaSbⅡ类超晶格材料的设计、生长、器件工艺技术,制备出了高性能的128×128中波InAs/GaSbⅡ类超晶格红外焦平面探测器,像元暗电流密度降到1.8×10-7A/cm2,量子效率达36.64%。更多还原

【Abstract】 Owing to the excellent material performance and device advantage of InAs /GaSb Type-Ⅱsuperlattice such as high quantum efficiency,low dark current and adjustable energy band structure,it has been one of the best choice for the third-generation infrared focal plane arrays detector. Material design,material growth and device technology of MW InAs / GaSb Type-Ⅱsuperlattice are reported. High performance 128 × 128 MW focal plane arrays were fabricated. Dark current density is 1. 8 × 10-7A / cm2and quantum efficiency reaches 36. 64%.更多还原