【摘要】 利用选择性横向外延技术生长{11-22}半极性面GaN模板,并利用半极性面模板生长InGaN/GaN多量子阱结构。结果表明,生长出的GaN模板由半极性面{11-22}面和c面组成,多量子阱具有390nm和420 nm的双峰发光特性,局域阴极发光(CL)测试表明390 nm附近的发光峰来源于半极性面上的量子阱发光,而420 nm左右的发光峰源于c面量子阱发光。c面量子阱发光相对于斜面量子阱发光发生显著红移是因为在选择性横向外延生长过程中,In组分相比Ga较易从掩模区域向窗口中心区域迁移,形成了中心高In组分的c面量子阱,而半极性面上InGaN/GaN多量子阱量子限制斯塔克效应相比于极性面会减弱,此外,相同生长条件下半极性面的生长速率低于极性c面的生长速率。更多还原

【Abstract】 Selective area epitaxy is applied to grow GaN(11-22) semipolar plane template,followed by InGaN/GaN multiple quantum wells(MQWs) growth.The results indicate that the GaN template is composed of the(11-22) side facet and planer c plane,and the MQWs show dual-color emission.Local cathodoluminescence reveals that the 390 nm emission peak originates from the MQWs on semipolar plane,while the 400 nm emission peak results from the MQWs on c plane.The large red-shift in emission wavelength for c plane MQWs compared with that of(11-22) semipolar plane MQWs is due to the indium enrichment originating from additional source supply due to the surface migration effect and lateral vapor- phase diffusion during selective area epitaxy.Another important reason is the reduced polarization effect InGaN/GaN MQWs on semipolar plane.At the same time,the growth rate of the semipolar plane is lower than that of the polar c plane under the same conditions.更多还原