【摘要】 为了提高晶圆片温度分布的均匀性、改善加热元件性能,采用传导与辐射耦合传热模型,对快速热处理工艺中晶圆片内传热过程进行了数值模拟,研究了3种掺杂硅硅栅宽度(lG=40,50,60μm)条件下,硅栅宽度与图案周期之比(lG/lP=0.05,0.10,0.25)变化对晶圆片温度分布的影响.结果表明:在相同掺杂硅硅栅宽度条件下,随着硅栅排列密度的增加,晶圆片总的温度水平下降,晶圆片表面温度温差变小,温度均匀性提高;在相同硅栅排列密度条件下,随着硅栅宽度的增加,晶圆片温度水平不断提高,而晶圆片表面温度温差几乎没有变化.这是因为晶圆片表面图案结构变化改变了表面吸收特性,调整了对入射辐射能量的吸收和分配,影响了晶圆片温度水平和温度均匀性.更多还原

【Abstract】 To improve the temperature uniformity of the wafer and better the device performance,a combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer during Rapid Thermal Process,and the effects of the ratio of gate width to the pattern period( lG/ lP= 0. 05,0. 10,0. 25) on the temperature distribution were investigated,under three fixed doped silicon gate widths( lT= 40,50, 60μm). The results show that,under the same doped silicon gate width,the temperature level of wafer decreases,the temperature difference reduces and the temperature uniformity of the wafer surface increases with the increase of the pattern arrangement density. Under the same doped silicon gate arrangement density, the temperature level enhances but the temperature uniformity changes little with the increase of the doped silicon gate width. This is because the wafer pattern structure changes the surface absorptance,adjusts the absorbing and distributing level of incident radiation energy,and transforms the temperature level and uniformity.更多还原