【摘要】 设计了一种宽带、噪声系数仅为0.48dB的有源偏置超低噪声放大器。低噪声放大器采用0.5μm GaAs E-PHEMT工艺研制,2.0mm×2.0mm×0.75mm 8-pin双侧引脚扁平无铅封装,具有低噪声、高增益、高线性等特点,是GSM/CDMA基站应用上理想的一款低噪声放大器。更多还原

【Abstract】 A wideband active bias low noise amplifier with 0.48 dB noise figure is presented.By employing the 0.5μm GaAs enhancement-mode pHEMT process,the LNA has achieved low noise,high gain and high linearity.The LNA is housed in a 2.0mm×2.0mm×0.75 mm miniature package with 8-pin dual-flat-lead(DFN).It is believed that this LNA is an ideal choice for GSM and CDMA cellular infrastructure.更多还原