【摘要】 对GaAs基共振隧穿二极管(RTD)的I-V特性随温度(T)的变化进行了系统测量,并基于此I-V特性,采用第一正阻区斜率法和第二正阻区I-V特性法测量了RTD的直流串联电阻(Rs)。分析、比较了两种方法各自的特点,发现Rs随T的降低开始阶段增大,随着T进一步降低趋于一定值或略有升高后趋于一定值。结合峰值电流(Ip)和有效起始电压(Vi)随T的变化规律解释了峰值电压(Vp)随T的降低移向高电压的现象。更多还原

【Abstract】 In this paper,the I-V characteristics changing with temperature of GaAs-based RTD have been measured systematically.Based on these I-Vcharacteristics,the D.C series resistance(Rs)of RTD is measured by adopting both methods of the first positive region slope and second positive region I-Vcurve.Then the features between two methods have been analysed and compared.The experimental results show that Rsincreases as temperature Tdecreases at the first step,then decreases or slightly increases,and finally approaches a definite value.An explanation is provided for this phenomenon in detail.In addition,an explanation of peak voltage(Vp)shifting to high voltage as temperature Tdecreases is made by considering the variation of peak current(Ip)and effective threshold voltage(Vi)with temperature.更多还原