【摘要】 利用Fourier变换红外光谱技术研究了高剂量快中子辐照直拉单晶硅中的辐照缺陷。研究表明,当中子剂量超过1018n·cm-2,在硅晶体会引入大量的非晶区和少量的非晶层(由连续的非晶区组成),分别在FTIR光谱中引入485和529.2 cm-1两个吸收带。退火实验表明,非晶区(485 cm-1)经150℃热处理后开始再结晶,有效的退火温度约为300℃;非晶层(529.2 cm-1)经300℃热处理后开始再结晶,有效的退火温度为500℃左右。更多还原

【Abstract】 Fourier transform infrared( FTIR) spectroscopy has been used to investigate the irradiated defects in high dose fast neutron-irradiated Czochralski silicon( CZSi). The results show that when irradiation dose up to 1018 n · cm-2there are a massive amorphous region and a small quantity of amorphous layer in irradiated silicon and they will arouse 485 and 529. 2 cm-1absorption bands in measured FTIR spectra respectively. The results also show that the re-crystallization of the amorphous region( absorption band at 485 cm-1) and amorphous layer( absorption band at 529.2 cm-1) occurs at150 ℃ and 300 ℃,and their full re-crystallization temperature is about 300 ℃ and 500 ℃ respectively.更多还原