【摘要】 利用高真空直流磁控溅射仪,在玻璃衬底上制备了结构为"Glass/Ta(6nm)/NiFe(6nm)/CoFe(1nm)/Cu(3nm)/CoFe(t nm)/IrMn(11nm)/Ta(6nm)"的自旋阀.研究了被钉扎层CoFe的厚度t对自旋阀磁性能的影响,当t为7.5nm时自旋阀主要性能达到最佳,并且在外加磁场4 000Oe下,270℃保温3h退火处理后,自旋阀的GMR值进一步达到5.5%,自由层矫顽力为3Oe,交换偏置场为130Oe.通过以上的优化方案,可以研制出高磁电阻率、低矫顽力和大交换偏置场的自旋阀.更多还原

【Abstract】 The spin valve with Glass/Ta(6nm)/NiFe(6nm)/CoFe(1nm)/Cu(3nm)/CoFe(tnm)/IrMn(11nm)/Ta(6nm)was made on glass substrate by using high vacuum DC magnetron sputtering equipment.The influence of t(thickness of the pinned layer CoFe)on the magnetic properties of the spin valve was investigated and the performance of the valve was found to be optimum when t was 7.5nm.After being annealed at 270℃for 3hours in a magnetic field with 4 000Oe,the GMR of the valve increased to 5.5%,the coercivity reduced to 3Oe and the exchange bias field was 130Oe.By this optimal method,the spin valve with high MR,small coercivity and high exchange bias field can be obtained.更多还原