【摘要】 提出一种氢等离子辅助固相晶化(hydrogen plasma assisted solid phase crystallization,H-SPC)多晶硅的新颖技术。这一晶化技术能够明显缩短晶化时间,同时有效钝化多晶硅薄膜的缺陷态。首先对氢等离子辅助SPC技术与传统SPC技术进行比较分析,进而研究了晶化过程中各种工艺条件对多晶硅晶化质量的影响并进行了物理机制的初步分析。更多还原

【Abstract】 In this paper,a novel technology of hydrogen plasma assisted solid phase crystallization polysilicon was proposed. This crystallization technology can not only reduce the crystallization time but also passivate defects in the poly-Si thin films effectively. We compared the H-SPC with traditional SPC firstly,and then,investigated the influence of process conditions on the quality of the resultant polysilicon. In addition,we studied the physical mechanism of this crystallization technology.更多还原