【摘要】 研究了氢等离子体钝化多晶硅(poly-Si)薄膜中缺陷态的详细物理机制。结果表明,多晶硅中不同的缺陷态需要不同的氢等离子体基团予以钝化。Hα具有较低的能量,主要钝化悬挂键类缺陷态;H*具有较高的能量,对钝化晶界附近与镍杂质相关的缺陷态更有效;Hβ和Hγ具有的能量最高,可以用来钝化晶粒内部的缺陷态。这些分析和结果有利于优化H等离子体钝化多晶硅的条件,进一步提高多晶硅性能。更多还原

【Abstract】 The mechanism of hydrogen plasma passivation for poly-Si thin films has been investigated.It has been found that different kind of hydrogen plasma radical was responsible for different defects passivation for poly-Si.The Hα with low energy was mainly responsible for passivating the dangling-bond defects.The H*with higher energy may passivate the defects related to Ni impurity around the grain boundaries more effectively.In addition,the Hβand Hγwith the highest energy are required to passivate intra-grain defects.These analysis and results are very usable to optimize the H plasma passivation and make the passivation more effective.更多还原