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Design of 15 Gb/s inductorless limiting amplifier with RSSI and LOS indication in 65nm CMOS

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【作者】 陈莹梅Xu ZhigangWang TaoZhang Li

【Author】 Chen Yingmei;Xu Zhigang;Wang Tao;Zhang Li;Institute of RF- & OE-ICs,Southeast University;

【机构】 Institute of RF- & OE-ICs,Southeast University

【摘要】 A limiting amplifier IC implemented in 65 nm CMOS technology and intended for high-speed optical fiber communications is described in this paper.The inductorless limiting amplifier incorporates5-stage 8 dB gain limiting cells with active feedback and negative Miller capacitance,a high speed output buffer with novel third order active feedback,and a high speed full-wave rectifier.The receiver signal strength indictor(RSSI) can detect input signal power with 33 dB dynamic range,and the limiting amplifier features a programmable loss of signal(LOS) indication with external resistor.The sensitivity of the limiting amplifier is 5.5mV at BER = 10 -12 and the layout area is only 0.53 ×0.72 mm because of no passive inductor.The total gain is over 41 dB,and bandwidth exceeds12 GHz with 56 mW power dissipation.

【Abstract】 A limiting amplifier IC implemented in 65 nm CMOS technology and intended for high-speed optical fiber communications is described in this paper.The inductorless limiting amplifier incorporates5-stage 8 dB gain limiting cells with active feedback and negative Miller capacitance,a high speed output buffer with novel third order active feedback,and a high speed full-wave rectifier.The receiver signal strength indictor(RSSI) can detect input signal power with 33 dB dynamic range,and the limiting amplifier features a programmable loss of signal(LOS) indication with external resistor.The sensitivity of the limiting amplifier is 5.5mV at BER = 10 -12 and the layout area is only 0.53 ×0.72 mm because of no passive inductor.The total gain is over 41 dB,and bandwidth exceeds12 GHz with 56 mW power dissipation.

【基金】 Supported by the National High Technology Research and Development Programme of China(No.2011AA010301);the National Natural Science Foundation of China(No.60976029)
  • 【文献出处】 High Technology Letters ,高技术通讯(英文版) , 编辑部邮箱 ,2014年01期
  • 【分类号】TN722
  • 【下载频次】36
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