【摘要】 采用溶剂热合成技术,以氯化铜、硝酸铟和硫脲为反应物,十六烷基三甲基溴化铵(CTAB)为阳离子表面活性剂,草酸为还原剂,无水乙醇为溶剂,直接在掺氟的SnO2透明导电玻璃(FTO)衬底上合成CuInS2(CIS)薄膜.采用扫描电子显微镜(SEM)、高分辨率透射电子显微镜(HRTEM)、X射线衍射(XRD)、拉曼光谱、能量色散谱(EDS)、紫外-可见(UV-Vis)反射光谱和透射光谱对样品的形貌、结构、成分和光学性能进行分析.结果表明,在适当的反应物浓度下,在FTO衬底上形成了垂直衬底生长的、具有良好结晶性能的黄铜矿结构的CIS纳米纸阵列薄膜.CIS薄膜中Cu,In,S的原子比为1.1∶1∶2.09,在紫外-可见和近红外波段具有良好的光吸收特性,禁带宽度约1.51 eV.结合不同反应时间制备的CIS薄膜的形貌、结构和成分分析,讨论了CIS纳米纸阵列薄膜的生长机理.更多还原

【Abstract】 CuInS2( CIS) thin films of nanosheet array were deposited directly onto transparent conductive fluorine-doped tin oxide( FTO) substrates by solvothermal method using the precursors of copper( Ⅱ) chloride dihydrate,indium( Ⅲ) nitrate,thiourea,hexadecyl trimethyl ammonium bromide,oxalic acid,and ethanol.The morphology,crystallographic structure,chemical composition,and optical property of CIS thin films of nanosheet array were investigated using scanning electron microscopy( SEM),high resolution transmission electron microscopy( HRTEM),X-ray diffraction( XRD),Raman spectrum,energy dispersive spectrometry( EDS) and UV-Vis spectroscopy,respectively. It is revealed that highly uniform and dense vertical arrays of single crystalline nanosheets with chalcopyrite planes are formed. The atomic ratio of Cu /In /S is1. 1∶ 1∶ 2. 09,very close to theoretical value of 1∶ 1∶ 2 of stoichiometric CIS. CIS thin films of nanosheet array have good light absorption characteristics at the UV-visible and near infrared wave range,and the optical band gap is found to be 1. 51 eV. The growth mechanism of CIS thin films of nanosheet array was investigated according to the characterization of CIS thin films deposited at different reaction times.更多还原