【摘要】 采用超高压熔渗法制备了Diamond/SiC/Cu复合材料,通过研究不同SiC含量下样品的热导率变化规律及界面性能,提出孤立界面模型。主要阐释孤立界面模型的适用条件、主要内容及定量公式。通过孤立界面模型,说明低SiC掺杂量的必要性和Diamond骨架对于复合材料导热性能的重要性。结果表明,SiC最佳掺杂量为15%,此时复合材料的综合性能最优:热导率526.7 W·m-1·K-1,热膨胀系数2.4 ppm/K,密度3.74 g/cm3,节省原料成本近15%。更多还原

【Abstract】 Diamond /SiC /Cu composites were prepared by ultrahigh pressure( 5. 5GPa) infiltration technique.Through the study of thermal conductivity and interface properties with different SiC doping amount,the isolated interface model was proposed. The model conditions,main content and quantitative equations of the theory were discussed in this paper. Based on this model,the necessity of low SiC doping amount and the importance of the Diamond bonding skeleton were well illustrated. The result shows that the optimal SiC doping amount is 15%,with TC 526. 7 W·m- 1·K- 1,CTE 2.4 ppm/K,density 3.74 g. cm- 3and reducing the material cost nearly 15%.更多还原