【摘要】 采用射频磁控溅射方法在n型硅片上制备了底栅顶结构的铟镓锌氧-薄膜晶体管(IGZO-TFT)。分别采用Au、Cu、Al 3种金属材料作为电极,研究不同电极材料对IGZO薄膜晶体管性能的影响。器件的输出特性和转移特性测试结果表明:以Au为电极的IGZO-TFT具有最佳的性能,其饱和输出电流达到17.9μA,开关比达到1.4×106。基于功函数比较分析了3种电极的接触特性,根据TLM(Transmission line model)理论推算得出Au电极具有三者中最小的接触电阻。更多还原

【Abstract】 Indium gallium zinc oxide thin film transistors(IGZO-TFTs) with bottom-gate top structure were fabricated on n-type silicon substrates using radio frequency(RF) magnetron sputtering method.Three kinds of metal material such as Au,Cu,and Al were used to fabricate electrode,respectively,and the effects of different electrode materials on IGZO TFT performance were investigated. The output characteristic and transfer characteristic of the TFT devices were tested. The best performance was obtained when Au was used to fabricate electrode,its saturation output current was 17. 9 μA,and on-off current ratio was up to 1. 4 ×106. In addition,the contact characteristics between three kinds of electrodes and IGZO thin film were analyzed based on their work function. Au electrode had the smallest contact resistance of these three metal according to the TLM(transmission line model) theory.更多还原