节点文献
高峰值功率808nm垂直腔面发射激光器列阵
High Peak Power 808 nm Vertical-cavity Surface-emitting Laser Array
【摘要】 为了实现808 nm垂直腔面发射激光器(VCSEL)的高功率输出,对808 nm VCSEL的分布式布拉格反射镜(DBR)结构材料进行了优化设计,分析了AlxGa1-xAs材料中Al组分对于折射率与吸收的影响,并最终确定了材料。采用非闭合环结构制备了2×2 VCSEL列阵。通过波形分析法对VCSEL列阵的功率进行了测量:在脉冲宽度为20 ns、重复频率为100 Hz、注入电流为110 A的条件下,最大峰值功率为30 W;在脉冲宽度为60 ns、重复频率为100 Hz、注入电流为30 A的条件下,最大功率为9 W。对列阵的近场和远场进行了测量,激光器垂直发散角和水平发散角半高全宽分别为16.9°和17.6°。
【Abstract】 In order to achieve high output power of 808 nm vertical cavity surface emitting laser( VCSEL) array,the DBR material of 808 nm VCSEL was optimized,and Al content of AlxGa1- xAs was analyzed for the influence on refractive index and absorption. Based on the above analysis,2 ×2 VCSEL array was designed and fabricated with non-closed ring structure. The peak power of the VCSEL array was tested under waveform analysis method. The peak power is 30 W in 60 ns pulse width and 100 Hz repetition rate,and 9 W in 20 ns pulse width and 100 Hz repetition rate,respectively. The near-field and far-field of VCSEL array were also measured. The beam divergences with full-width at half maximum are 16. 9° and 17. 6° in the vertical and lateral directions,respectively.
- 【文献出处】 发光学报 ,Chinese Journal of Luminescence , 编辑部邮箱 ,2014年09期
- 【分类号】TN248.4
- 【被引频次】9
- 【下载频次】237