【摘要】 采用金属有机沉积(MOD)法在LaAlO3(LAO)单晶基片上沉积了LaMnO3(LMO)缓冲层薄膜,通过控制LMO薄膜关键生长工艺(如退火温度、退火时间),系统地研究了薄膜微结构的变化。实验表明:在较宽的退火温度窗口范围均能获得单一取向生长的LMO薄膜,但其面外织构特性受退火温度和退火时间的影响很大。在退火温度为750℃,退火时间为60 min的最优工艺条件下,制备的LMO缓冲层具有纯c轴取向。在该LMO缓冲层上沉积的YBa2Cu3O7–x(YBCO)超导薄膜的临界电流密度为1.0×106 A/cm2,成功证明MOD法制备LMO缓冲层的可行性。更多还原

【Abstract】 The growth of LaMnO3 films on(00l) LaAlO3(LAO) single crystal substrates via the metal-organic decomposition(MOD) method under different growth crafts such as annealing temperature and time was systematically investigated. The results show that single-oriented LMO films are obtained at a wide annealing-temperature range, while out-of-plane texture is greatly influenced by annealing temperature and time. Purely c-axis oriented LMO films are successfully deposited under the best annealing process parameters(750 ℃, 60 min). The YBa2 Cu3 O7–x(YBCO) superconducting film grown on the best LMO film exhibits a critical current density of 1.0×106 A/cm2, demonstrating the feasibility of epitaxial growth of LMO buffer layers for coated conductors based on MOD method.更多还原