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TiO2磁控溅射工艺参数对薄膜沉积速率的影响

Influence of Magnetron Sputtering Parameters on Deposition Rate of TiO2 Films

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【作者】 孙奉娄张龙

【Author】 SUN Feng-lou;ZHANG Long;Plasma Research Institute,South Central University of Nationalities;

【机构】 中南民族大学等离子体研究所

【摘要】 为了经济、有效、准确地在线测量光学薄膜厚度,采用射频磁控反应溅射法在玻璃衬底上制备TiO2薄膜。用自制的简易监测系统对TiO2薄膜在生长过程中的沉积速率进行了即时测量,研究了射频功率、气体流量、工作气压等工艺参数对TiO2薄膜沉积速率的影响规律。结果表明:沉积速率监测系统对膜厚变化反应灵敏,能够实时监测薄膜生长速率;溅射过程中,射频功率、氧氩流量比和工作气压对薄膜沉积速率有较大的影响,射频功率从120 W增加到240 W,薄膜沉积速率增加;氧气流量从1 mL/min增加到5 mL/min,薄膜沉积速率先逐渐增大后减小,存在一个临界点;工作气压从0.3 Pa增加到0.8 Pa,薄膜沉积速率缓慢增加,但临界点后迅速下降。

【Abstract】 TiO2 films were prepared on glass substrates using a radio frequency(RF) reactive magnetron sputtering facility.A monitoring system was constructed to in-situ measure the deposition rate of TiO2 film.The influences of RF power,oxygen flow rate and working pressure on the deposition rate of TiO2 films were studied.Results indicated that the deposition rate monitoring system was responsive to changing film thickness and could efficiently realize real-time monitoring.RF power,oxygen/argon flow ratio and working pressure had significant influences on the deposition rate.Namely,the deposition rate of TiO2 film increased with increasing RF power in the range of 120 240 W,and it initially increased but decreased later with increasing oxygen flow in the range of 1 5 mL/min.Moreover,the deposition rate initially rose slowly with increasing working pressure in the range of 0.3 0.8 Pa and reached a maximum,and finally it decreased rapidly above the critical working pressure.

【基金】 自主创新研究基金本科生项目专项基金(136820007)
  • 【文献出处】 材料保护 ,Materials Protection , 编辑部邮箱 ,2014年04期
  • 【分类号】O484
  • 【被引频次】14
  • 【下载频次】377
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