【摘要】 用分数维方法研究AlxGa1-x As衬底上GaAs薄膜中的极化子,得到了衬底中Al摩尔分数x对GaAs薄膜中极化子的结合能和有效质量的影响,极化子的结合能和有效质量的相对变化(mass shift)都随着Al摩尔分数的增大而单调增大;AlxGa1-x As衬底中Al摩尔分数对不同厚度的GaAs薄膜中极化子的影响程度不同,GaAs薄膜的厚度越小,衬底中Al摩尔分数对GaAs薄膜中极化子的影响越显著.更多还原

【Abstract】 Polaron in GaAs film deposited on Alx Ga1-x As substrate were investigated within the framework of fractional-dimensional approach.Polaron binding energy and effective mass were influenced by aluminum concentration in Alx Ga1-x As substrate,polaron binding energy and mass shift monotonically increased with increasing aluminum concentration.Effects of aluminum concentration in Alx Ga1-x As substrate on polaron in different thickness of GaAs film were different,the smaller the thickness of GaAs film was,the more significant influence of aluminum concentration on polaron in GaAs film was.更多还原