Graphene-based field-effect transistors(FETs) were fabricated by electron beam lithography and liftoff process and the photoresponse in the transistor was investigated.Significant photocurrents can be detected when the channel graphene near the metal contact is illuminated by a laser spot(λ = 633 nm).Both the magnitude and direction of the photocurrent can be effectively modulated by the back-gate voltage.In addition,the photocurrent will saturate by increasing the gate voltage.A maximum responsivity of 46....
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