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Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM

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【作者】 孙鹏霄刘肃李泠刘明

【Author】 Sun Pengxiao;Liu Su;Li Ling;Liu Ming;School of Physical Science and Technology, Lanzhou University;Institute of Microelectronics, Chinese Academy of Sciences;

【机构】 School of Physical Science and Technology Lanzhou UniversityInstitute of Microelectronics Chinese Academy of Sciences

【摘要】 Monte Carlo(MC) simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based Re RAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is relative high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament(CF) geometries and I–V characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.

【Abstract】 Monte Carlo(MC) simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based Re RAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is relative high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament(CF) geometries and I–V characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.

【基金】 Project supported by the Ministry of Science and Technology of China(Nos.2010CB934200,2011CBA00602,2009CB930803,2011CB921804,2011AA010401,2011AA010402,XDA06020102);the National Natural Science Foundation of China(Nos.61221004,61274091,60825403,61106119,61106082,61306117)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年10期
  • 【分类号】TP333
  • 【被引频次】5
  • 【下载频次】40
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