节点文献
Growth and properties of GaAs nanowires on fused quartz substrate
【摘要】 The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires (NWs) on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar {111} twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs,the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.
【Abstract】 The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires (NWs) on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar {111} twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs,the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.
【Key words】 GaAs nanowires; molecular beam epitaxy; fused quartz; zinc blende structure; photoluminescence;
- 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年09期
- 【分类号】TN304
- 【被引频次】1
- 【下载频次】34