节点文献

Growth and properties of GaAs nanowires on fused quartz substrate

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 赵玉峰; 李新化; 王文博; 周步康; 段花花; 史同飞; 曾雪松; 李宁; 王玉琦;

【Author】 Zhao Yufeng;Li Xinhua;Wang Wenbo;Zhou Bukang;Duan Huahua;Shi Tongfei;Zeng Xuesong;Li Ning;Wang Yuqi;Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences;

【机构】 Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences;

【摘要】 The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires (NWs) on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar {111} twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs,the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.

【Abstract】 The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires (NWs) on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar {111} twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs,the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.

【基金】 Project supported by the National Natural Science Foundation of China(Nos.11104271,11179042)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年09期
  • 【分类号】TN304
  • 【被引频次】1
  • 【下载频次】34
节点文献中: 

本文链接的文献网络图示:

本文的引文网络