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Hot-carrier effects on irradiated deep submicron NMOSFET

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【Author】 Cui Jiangwei;Zheng Qiwen;Yu Xuefeng;Cong Zhongchao;Zhou Hang;Guo Qi;Wen Lin;Wei Ying;Ren Diyuan;Key Laboratory of Functional Materials and Devices Under Special Environments,Chinese Academy of Sciences,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences;University of Chinese Academy of Sciences;

【机构】 Key Laboratory of Functional Materials and Devices Under Special Environments,Chinese Academy of Sciences,Xinjiang Key Laboratory of Electric Information Materials and Devices,Xinjiang Technical Institute of Physics & Chemistry,Chinese Academy of Sciences； University of Chinese Academy of Sciences；

【摘要】 We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.更多还原

【Abstract】 We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.更多还原

【关键词】 γ ray irradiation； deep submicron； hot-carrier effect；
【Key words】 γ ray irradiation； deep submicron； hot-carrier effect；

【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年07期

【分类号】TN386
【下载频次】54

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