Back-illuminated Al_xGa_1-xN-based dual-band solar-blind ultraviolet photodetectors

【摘要】 Back-illuminated AlxGa1..xN-based dual-band solar-blind ultraviolet(UV) photodetectors(PDs) are realized by a three-terminal n–i–p–i–n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition(MOCVD). The two p–i–n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of10.8 mA/W at 242 nm and 5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 m and 800 m, exhibit almost the same leakage current of 1.3 10..9 A at a reverse bias of10 V. Therefore, dark current densities of the two junctions are close to 6.6 10..7 A/cm2 and 2.6 10..7 A/cm2at..10 V respectively.更多还原

【Abstract】 Back-illuminated AlxGa1..xN-based dual-band solar-blind ultraviolet(UV) photodetectors(PDs) are realized by a three-terminal n–i–p–i–n heterojunction structure which is grown on sapphire substrate by metal organic chemical vapor deposition(MOCVD). The two p–i–n junctions contained in the heterojunction structure can work separately and independently. Working in the photovoltaic mode, the PDs display peak responsivity of10.8 mA/W at 242 nm and 5.0 mA/W at 257 nm, respectively. The two junctions with different size, whose diameters are 500 m and 800 m, exhibit almost the same leakage current of 1.3 10..9 A at a reverse bias of10 V. Therefore, dark current densities of the two junctions are close to 6.6 10..7 A/cm2 and 2.6 10..7 A/cm2at..10 V respectively.更多还原