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Reconfigurable dual-band low noise amplifier design and realization

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【作者】 唐旭升黄风义张有明唐欣

【Author】 Tang Xusheng;Huang Fengyi;Zhang Youming;Tang Xin;RF & OEIC Research Institute, National Mobile Communications Research Laboratory, Southeast University;

【机构】 RF & OEIC Research Institute, National Mobile Communications Research Laboratory, Southeast University

【摘要】 A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 m CMOS technology. Measured performance shows an input matching of better than –13.5 dB, a voltage gain of 18–22.8 dB, with an NF of 4.3–4.7 dB in the band of 3.4–3.6 GHz, and an input matching of better than –9.7 dB, a voltage gain of 14.7–22.4 dB,and with an NF of 3.7–4.9 dB in the band of 4.2–4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology.

【Abstract】 A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13μm CMOS technology. Measured performance shows an input matching of better than –13.5 dB, a voltage gain of 18–22.8 dB, with an NF of 4.3–4.7 dB in the band of 3.4–3.6 GHz, and an input matching of better than –9.7 dB, a voltage gain of 14.7–22.4 dB,and with an NF of 3.7–4.9 dB in the band of 4.2–4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology.

【关键词】 LNAreconfigurabledual-bandIMT-AUWBCMOS
【Key words】 LNAreconfigurabledual-bandIMT-AUWBCMOS
【基金】 supported by the National High Technology Research and Development Program of China(No.2009AA01Z261);the National Science and Technology Major Special Project(Nos.2009ZX03007-001,2012ZX03001-019)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年05期
  • 【分类号】TN722.3
  • 【被引频次】1
  • 【下载频次】54
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