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A 4 GHz CMOS multiplier for sigma–delta modulated signals

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【作者】 郭晓丹孟桥梁勇

【Author】 Guo Xiaodan;Meng Qiao;Liang Yong;Institute of RF- & OE-ICs, Southeast University;Engineering Research Center of RF-ICs & RF-Systems, Ministry of Education;

【机构】 Institute of RF- & OE-ICs, Southeast UniversityEngineering Research Center of RF-ICs & RF-Systems, Ministry of Education

【摘要】 An integrated circuit design of a high speed multiplier for direct sigma–delta modulated bit-stream signals is presented. Compared with conventional structures, this multiplier reduces the circuit-loop delay of its sub-modules and works efficiently at a high speed. The multiplier’s stability has also been improved with source coupled logic technology. The chip is fabricated in a TSMC 0.18- m CMOS process. The test results demonstrate thatthechiprealizesthemultiplicationfunctionandexhibitsanexcellentperformance.Itcanworkat4GHzandthe voltage output amplitude reaches the designed maximum value with no error bit caused by logic race-and-hazard.Additionally, the analysis of the multiplier’s noise performance is also presented.

【Abstract】 An integrated circuit design of a high speed multiplier for direct sigma–delta modulated bit-stream signals is presented. Compared with conventional structures, this multiplier reduces the circuit-loop delay of its sub-modules and works efficiently at a high speed. The multiplier’s stability has also been improved with source coupled logic technology. The chip is fabricated in a TSMC 0.18- m CMOS process. The test results demonstrate thatthechiprealizesthemultiplicationfunctionandexhibitsanexcellentperformance.Itcanworkat4GHzandthe voltage output amplitude reaches the designed maximum value with no error bit caused by logic race-and-hazard.Additionally, the analysis of the multiplier’s noise performance is also presented.

【关键词】 CMOSsigma–delta modulationmultiplierbit-stream
【Key words】 CMOSsigma–delta modulationmultiplierbit-stream
【基金】 supported by the National Natural Science Foundation of China(No.60576028)
  • 【文献出处】 Journal of Semiconductors ,半导体学报(英文版) , 编辑部邮箱 ,2014年01期
  • 【分类号】TN911.3
  • 【被引频次】5
  • 【下载频次】33
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