【摘要】 利用半导体材料波长易调节的特点,设计了AlGaInAs/GaAs/AlGaAs压应变量子阱结构,得到760、800、860、930和976nm 5个波长激射的半导体列阵激光器,同时设计了4个短波通滤波片参数,开展了半导体列阵激光器的多波长光束复合技术的实验研究,最终实现了5个波长的半导体列阵激光器的光束复合,得到112W的激光功率输出,总体效率为88.5%,其中波长复合效率达92.4%,输出聚焦光斑尺寸为136μm×1 330μm,聚焦光功率密度达6.43×104 W/cm2。更多还原

【Abstract】 Making use of the characteristic of adjustable wavelength of semiconductor materials,AlGaInAs/GaAs/AlGaAs compressive strain quantum well structure was designed and the diode arrays with different wavelength of 760,800,860,930and 976nm were fabricated. And also four kinds of edge-band filters and one set of collimating system were designed.Then the five different beams were multiplexed and the laser power of 112W with the total efficiency of 88.54%is obtained.And the focused spot and the focus optical power density are measured to be 136μm×1 330μm and 6.43×104 W/cm2,respectively.更多还原