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1.55μm短腔垂直腔面发射激光器的优化设计

Optimization Design of 1.55μm Short-cavity VCSELs

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【作者】 王志燕贾护军毛周李泳锦成涛裴晓延孙哲霖

【Author】 WANG Zhiyan;JIA Hujun;MAO Zhou;LI Yongjin;CHENG Tao;PEI Xiaoyan;SUN Zhelin;Key Lab.for Wide Band-Gap Semiconductor of the Ministry of Education,School of Microelectronics,Xidian University;

【机构】 西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室

【摘要】 设计了一种基于InP衬底的1.55μm短腔垂直腔面发射激光器(VCSEL),先从结构上对上下反射镜进行了优化设计,然后重点对谐振腔的腔长进行了优化,采用1λ短腔结构,用Matlab软件进行了仿真,结果表明:优化后的VCSEL器件的输出功率为2.22mW,饱和松弛响应频率fR,sat为34.5GHz,最大-3dB带宽为30.5GHz,与目前此波段的最大带宽(19GHz)相比,提高了约60%。

【Abstract】 The design of the short-cavity vertical cavity surface emitting laser(VCSEL) based on InP substrate in 1.55μm waveband is presented.The optimizations of the top and bottom mirrors and the resonant cavity length were implemented,and then the resonant cavity length was optimized.Finally,the VCSEL with the 1λmicro-cavity structure was employed and simulated with Matlab software,and the simulation results show that the output power of the VCSEL is enhanced to 2.22mW,the saturated relaxation response frequency fR,satis 34.5GHz, and the maximum-3dB bandwidth is 30.5GHz,which increases by about 60%compared to the existing maximum bandwidth(19GHz)in this waveband.

【基金】 国家部委基金项目(51323030306)
  • 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2014年01期
  • 【分类号】TN248
  • 【被引频次】1
  • 【下载频次】206
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