Two-dimensional transition metal sulfide, such as molybdenum disulfide (MoS2), is a low-dimensional semiconductor material with broad-band gap. Monolayer MoS2has direct band gap (1.8ev), which is a good candidate for building field-effect transistors with low quiescent power drain and high on-off ratio.
In this paper,top-down micro-mechanical stripping method has been adopted to manufacture monolayer or multilayer grapheme-like molybdenum disulfide nanosheets, and Raman spectrum adopted to characterize ...
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