【摘要】 在前期Ge-Sb-Te基相变存储材料Ge2Sb2Te5靶材和薄膜制备研究的基础上,分别选取掺杂5.6%(原子分数)的Sn,Bi作为添加剂对其进行掺杂改性。采用热压法制备出高主相含量、高致密度六方结构Ge2Sb2Te5基靶材。常温下沉积的薄膜为非晶态,经150～350℃退火处理,薄膜相结构经历了由非晶态到立方相再到六方相的相转变过程。掺杂5.6%(原子分数)的Sn在入射光波长为500 nm时的反射率对比度相比未掺杂薄膜提高了14%,该薄膜潜在的光存储性能更好。掺杂Sn,Bi后结晶态与非晶态间的电阻率差异度有所增加。更多还原

【Abstract】 Sn,Bi was doped in Ge2Sb2Te5(GST) targets which used as PCM(phase change memory) material.GST sputter targets with high main phase content and high relative density were made by hot-press sintering method.The film deposited at room temperature was amorphous,after annealed at 150～350 ℃,the phase structure of the film changed from amorphous state to cubic phase and then to hexagonal phase.The reflection difference of 5.6%(atom fraction) Sn-doped thin film increased 14% at 500 nm wavelength comparing to undoped film,which meant this material had better potential property as optical memory.The resistivity difference between amorphous and hexagon state of the Sn-and Bi-doped thin films increased as to Ge2Sb2Te5.更多还原