【摘要】 GaAs基半导体激光器芯片在空气中解理后,解理腔面会被空气氧化形成腔面缺陷,在腔面形成的缺陷严重影响了器件的寿命。用GaAs衬底表面模拟半导体激光器的解理腔面,研究了不同的光学薄膜对GaAs表面特性的影响。研究结果表明暴露在大气中的GaAs表面会形成Ga2O3、As2O3和As2O5缺陷。在表面镀含氧光学膜的GaAs表面上会形成少量Ga2O3缺陷,不形成As2O3和As2O5缺陷,在表面镀ZnSe光学薄膜的GaAs表面没有形成Ga2O3缺陷,也没有形成As2O3和As2O5缺陷。在GaAs表面上蒸镀ZnSe光学薄膜能有效地抑制GaAs表面缺陷的形成,提高半导体激光器的寿命。更多还原

【Abstract】 The surfaces of cleaved GaAs were modified with different optical ZnSe films,grown by vacuum evaporation.The electronic structures of the GaAs surfaces,with and without ZnSe coating,were characterized with X-ray photoelectron spectroscopy.The results show that the ZnSe films significantly increases the oxidation resistance of the GaAs surface,and reduces the surface density of defects.For example,a large amount of defects,possiblly caused by formation of Ga2O3,As2O3,and As2O5,were observed on the GaAs wafer exposed in air;while only a very low density of Ga2O3-induced defect was found to exist on the ZnSe-coated GaAs surfaces.We suggest that the ZnSe coating may considerably improves the surface oxidation resistance of GaAs,and increases the reliability and life-time of the GaAs laser devices.更多还原