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The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

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【Author】 Li Juan;Luo Chong;Meng Zhi-Guo;Xiong Shao-Zhen;Hoi Sing Kwok;Institute of Photo-Electronics,Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Nankai University;Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay;

【机构】 Institute of Photo-Electronics,Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Nankai University； Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay；

【摘要】 The mechanism of hydrogen plasma passivation for poly-crystalline silicon(poly-Si) thin films is investigated by optical emission spectroscopy(OES) combined with Hall mobility,Raman spectra,absorption coefficient spectra,and so on.It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi.The Hαwith lower energy is mainly responsible for passivating the solid phase crystallization(SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition(PECVD).The H?with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively.In addition,Hβand Hγwith the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited by low pressure chemical vapor deposition(LPCVD).更多还原

【Abstract】 The mechanism of hydrogen plasma passivation for poly-crystalline silicon(poly-Si) thin films is investigated by optical emission spectroscopy(OES) combined with Hall mobility,Raman spectra,absorption coefficient spectra,and so on.It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polySi.The Hαwith lower energy is mainly responsible for passivating the solid phase crystallization(SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition(PECVD).The H?with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively.In addition,Hβand Hγwith the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited by low pressure chemical vapor deposition(LPCVD).更多还原

【关键词】 hydrogen plasma； passivation； poly-Si； mechanism；
【Key words】 hydrogen plasma； passivation； poly-Si； mechanism；

【基金】 Project supported by the National Natural Science Foundation of China(Grant No.61076006);the Flat-Panel Display Special Project of China’s 863 Plan(Grant No.2008AA03A335)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2013年10期

【分类号】TB383.2
【下载频次】13

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