Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respective...
【英文摘要】
Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respective...
【基金】
the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-10-0291);
the Startup Research Project of University of Electronic Science and Technology of China(Grant No.Y02002010301041)
【更新日期】
2013-08-08
【分类号】
O484.1
【正文快照】
1.IntroductionGraphene,as a monolayer to a few layers of sp2-bondedhexagonally coordinated carbon atoms,[1]has received muchattention due to its two-dimensional planar structure andnumerous novel properties such as its fast charge trans-port,quantum-spin
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