Aluminum-oxide films deposited as gate dielectrics on germanium(Ge) by atomic layer deposition were post oxidized in an ozone atmosphere.No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy measurements made after the ozone post oxidation(OPO) treatment.Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/GeMOS capacitors were confirmed.Furthermore,a continuous decrease in the gate leakage cu...
【英文摘要】
Aluminum-oxide films deposited as gate dielectrics on germanium(Ge) by atomic layer deposition were post oxidized in an ozone atmosphere.No additional interfacial layer was detected by the high-resolution cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy measurements made after the ozone post oxidation(OPO) treatment.Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/GeMOS capacitors were confirmed.Furthermore,a continuous decrease in the gate leakage cu...
【基金】
supported by the National Program for Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607);
the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048);
the National Science and Technology Major Projects (Grant No. 2009ZX02035);
the State Key Laboratory of ASIC and System Project (Grant No. 11MS017);
the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001)
【更新日期】
2013-07-02
【分类号】
TM53
【正文快照】
1. IntroductionFuture complementary metal-oxide semiconductor(CMOS) scaling requires the introduction of new channel ma-terials and innovative device structures.[1]Germanium (Ge)has been widely considered as a promising alternative to Si asa new channel m
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