AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their se...
【英文摘要】
AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their se...
【基金】
Project supported by the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T04);
the National Natural Science Foundation of China (Grant Nos. 61204012 and 61274049);
the Beijing Natural Science Foundation, China (Grant No. 2112040);
the Beijing Nova Program, China (Grant No. 2010B056)
【更新日期】
2013-05-27
【分类号】
TN382
【正文快照】
1. Introduction The principle of operation of Hall devices is based on the classical Hall effects. They are used in many fields, es- pecially as magnetic sensors. Since the first generation of Hall magnetic sensors were commercially available in the mid-
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