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A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor  
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【英文篇名】 A single-event transient induced by a pulsed laser in a silicon–germanium heterojunction bipolar transistor
【下载频次】 ★☆
【作者】 孙亚宾; 付军; 许军; 王玉东; 周卫; 张伟; 崔杰; 李高庆; 刘志弘; 余永涛; 马英起; 封国强; 韩建伟;
【英文作者】 Sun Ya-Bin a)b); Fu Jun a)b); Xu Jun a)b); Wang Yu-Dong a)b); Zhou Wei a)b); Zhang Wei a); Cui Jie a); Li Gao-Qing a); Liu Zhi-Hong a)b); Yu Yong-Tao c); Ma Ying-Qi c); Feng Guo-Qiang c); and Han Jian-Wei c) a) Institute of Microelectronics; Tsinghua University; Beijing 100084; China b) Tsinghua National Laboratory for Information Science and Technology; China c) National Space Science Center; Chinese Academy of Sciences; Beijing 100190; China;
【作者单位】 Institute of Microelectronics; Tsinghua University; Tsinghua National Laboratory for Information Science and Technology; National Space Science Center; Chinese Academy of Sciences;
【文献出处】 Chinese Physics B , 中国物理B, 编辑部邮箱 2013年 05期  
期刊荣誉：ASPT来源刊  CJFD收录刊
【英文关键词】 single event transient (SET); pulsed laser; charge collection; SiGe heterojunction bipolar transistor (HBT);
【摘要】 A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significant...
【英文摘要】 A study on the single event transient (SET) induced by a pulsed laser in a silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) is presented in this work. The impacts of laser energy and collector load resistance on the SET are investigated in detail. The waveform, amplitude, and width of the SET pulse as well as collected charge are used to characterize the SET response. The experimental results are discussed in detail and it is demonstrated that the laser energy and load resistance significant...
【基金】 Project supported by the National Natural Science Foundation of China (Grant No. 60976013)
【更新日期】 2013-05-27
【分类号】 TN322.8
【正文快照】 1. Introduction Degradation and failure caused by radiation damage [1–8] are major challenges when semiconductor devices operate in a space radiation environment. Silicon–germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar comple- menta

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