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Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge（001） substrates with zero interface layer

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【作者】 张心强； 屠海令； 魏峰； 熊玉华； 杨萌萌； 赵洪滨； 杜军； 王文武；

【Author】 ZHANG Xinqiang;TU Hailing;WEI Feng;XIONG Yuhua;YANG Mengmeng;ZHAO Hongbin;DU Jun;WANG Wenwu;Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals;National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals;Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences;

【机构】 Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals； National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals； Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences；

【摘要】 The GHO(Gd2O3-doped HfO2)films were epitaxially grown on Ge(001)substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition(PLD).Reflection high-energy electron diffraction(RHEED)and high-resolution transmission electron microscopy(HRTEM)observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to(001)GHO//(001)Ge and[011]GHO//[011]Ge.The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum.Small equivalent oxide thickness(0.49 nm)and interface state density(7×1011cm–2)were achieved from Au/Ti/GHO/Ge/Al capacitors.

【Abstract】 The GHO(Gd2O3-doped HfO2) films were epitaxially grown on Ge(001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition(PLD). Reflection high-energy electron diffraction(RHEED) and high-resolution transmission electron microscopy(HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to(001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness(0.49 nm) and interface state density(7×1011cm–2) were achieved from Au/Ti/GHO/Ge/Al capacitors.

【关键词】 dielectric material； epitaxial growth； interface； Gd2O3； HfO2； rare earths；
【Key words】 dielectric material； epitaxial growth； interface； Gd2O3； HfO2； rare earths；
【基金】 supported by National Natural Science Foundation of China(50932001);National Science and Technology Major Projects(2009ZX02039-005,51102020,51202013)
  • 【文献出处】 Journal of Rare Earths ,稀土学报(英文版) , 编辑部邮箱 ,2013年11期
  • 【分类号】TN304.054
  • 【下载频次】43
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