Effects of NH₃ annealing on interface and electrical properties of Gd-doped HfO₂/Si stack

【摘要】 Effects of NH3 rapid thermal annealing(RTA) on the interface and electrical properties of Gd-doped HfO2(GDH)/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower(3.9×10-4A/cm2).The effective permittivity extracted from the C-V curves was～14.1 and ～13.1 for samples without and with RTA,respectively.更多还原

【Abstract】 Effects of NH3 rapid thermal annealing(RTA) on the interface and electrical properties of Gd-doped HfO2(GDH)/Si stack were investigated.The process of NH3 annealing could significantly affect the crystallization,stoichiometric properties of GDH film and the interface characteristic of GDH/Si system.NH3 annealing also led to the decrease of interface layer thickness.The leakage current density of Pt/GDH/p-Si MOS capacitor without RTA was 2×10-3 A/cm2.After NH3 annealing,the leakage current density was about one order of magnitude lower(3.9×10-4A/cm2).The effective permittivity extracted from the C-V curves was～14.1 and ～13.1 for samples without and with RTA,respectively.更多还原