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Ba_0.6Sr_0.4TiO₃薄膜的耐压特性研究

Study on Voltage-Withstand Property of Ba_0.6Sr_0.4TiO₃ Thin Films

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【Author】 ZHU Bin,ZHANG Hongbo,WANG Wenjun,LI Sizhong,ZHAO Qiang,CHEN Hongwei,YANG Chuanren,ZHANG Jihua(State Key Lab.of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】电子科技大学电子薄膜与集成器件国家重点实验室；

【摘要】采用射频磁控溅射法制备了Ba0.6Sr0.4TiO3(BST)薄膜,研究了基片、退火温度及膜厚对薄膜耐压特性的影响。结果显示,铝酸镧(LaAlO3)基片上制备的BST薄膜表面较平整,有较好的耐压;随着退火温度从750℃提高到850℃,BST薄膜晶粒长大,电击穿概率有所增加,750℃是一个较合理的退火温度。在优化的工艺条件下,BST薄膜耐压可达125V/μm。更多还原

【Abstract】 Ba0.6Sr0.4TiO3(BST) thin films were prepared by radio-frequency magnetron sputtering method and the effect of the substrate,annealing temperature and film thickness on the voltage-withstand property was studied.The result shows that the BST thin films deposited on LaAlO3 substrates has smoother surface and higher voltage-withstand property.The crystalline grain size of the BST thin film become larger with the annealing temperature increased from 750 ℃ to 850 ℃,and the electrical breakdown probability has been increased to some extent.In our results,750 ℃ is a more reasonable temperature for the films annealing.At the optimized process,BST thin film can withstand more than 125 V/μm.更多还原