【摘要】 本文在探索半导体器件辐射损伤效应与机理的基础上,研究了通过器件的优化设计达到抗辐射加固性能要求的有效方法.基于0.18μmCMOS工艺条件,利用DVINCI三维器件模拟软件,建立了具有较好抗辐射性能的FD-SOI/MOSFET器件的加固模型,并提出了一种新型有源区裁剪(ARC)的双多晶硅栅结构晶体管.通过模拟辐射环境下器件的工作情况,证明该种结构具有很强的抗总剂量辐射的能力.更多还原

【Abstract】 In this paper,the effects and mechanisms of ionizing radiation for semiconductor devices are researched. It’s an effective way to meet requirement of improving in radiation hardening by device structure optimizatioa The radiation-harden models of FD- SOI/MOSFET have been built,which are based on the 0.18μm CMOS process. And the radiation effects what work on the MOS structure are simulated by DVINCI.Active-Region- Cutout (ARC) technique with dual gate is developed to modify the transistor.It’s proved that this structure obtains higher radiation tolerance.更多还原